NMOS/SiGe Resonant Interband Tunneling Diode Static Random Access Memory

Author

Sudirgo, S. ; Pawlik, D.J. ; Kurinec, S.K. ; Thompson, P.E. ; Daulton, J.W. ; Park, S.-Y. ; Yu, R. ; Berger, P.R. ; Rommel, S.L.

Author_Institution

Department of Microelectronic Engineering, 82 Lomb Memorial Dr., Rochester, NY 14623. Email: slremc@rit.edu, Phone: (585)475-4723

fYear

2006

fDate

26-28 June 2006

Firstpage

265

Lastpage

266

Keywords

Current density; Diodes; Germanium silicon alloys; Latches; MOS devices; Resonance; SRAM chips; Silicon germanium; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

DOI

10.1109/DRC.2006.305175

Filename

4097630

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