Title :
NMOS/SiGe Resonant Interband Tunneling Diode Static Random Access Memory
Author :
Sudirgo, S. ; Pawlik, D.J. ; Kurinec, S.K. ; Thompson, P.E. ; Daulton, J.W. ; Park, S.-Y. ; Yu, R. ; Berger, P.R. ; Rommel, S.L.
Author_Institution :
Department of Microelectronic Engineering, 82 Lomb Memorial Dr., Rochester, NY 14623. Email: slremc@rit.edu, Phone: (585)475-4723
Keywords :
Current density; Diodes; Germanium silicon alloys; Latches; MOS devices; Resonance; SRAM chips; Silicon germanium; Tunneling; Voltage;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305175
