Resist characteristics of acryl polymers for 193nm lithography

The control of line edge roughness (LER) in patterned resist lines is a major challenging topic in manufacturing of semiconductors [l, 2]. Therefore, there are numerous reports of fundamental challenges in desipng materials and resist processing parameters to reduce LER [3-7]. In the past, we have reported the effect of protecting group of polymer materials on lithographic performance [8-10]. These results suggest that alkoxy-methyl protectins group is effective for Mher controllug LER. Preparing three dfferent copolymers AdOMMA-co-GBLMA, MAdOMMA-CO-GBLMA and MAdMA-co-GBLMA as shown in Figure 1, we have evaluated copolymers properties, resolution and LER. Table 1 shows the thermal properhes of AdOMMA-co-GBLMA, MAdOMMA-co-GBLMA and MAdMA-CO-GBLMA.