Evolution of radiation-induced soft errors in FinFET SRAMs under process variations beyond 22nm

Author

Royer, Pablo ; Garcia-Redondo, Fernando ; Lopez-Vallejo, Marisa

Author_Institution

Dipt. de Ing. Electron., Univ. Politec. de Madrid, Madrid, Spain

fYear

2015

fDate

8-10 July 2015

Firstpage

112

Lastpage

117

Abstract

New CMOS technologies such as SOI or FinFET are expected to enhance SRAM radiation-induced soft error rates thanks to a reduction on the charge collected as the devices get smaller. In this work we analyze how the radiation hardening capabilities of SRAMs are affected when process variations are considered by simulating cells using a predictive FinFET technology. The results show that even if the average critical charge to which SRAM cells are vulnerable is enhanced by process variations, its widened spread leads to an increase of the soft error rate by more than 40% as the technology node is scaled down to 7nm.

Keywords

CMOS memory circuits; MOSFET; SRAM chips; radiation hardening (electronics); CMOS technologies; FinFET SRAM; average critical charge; process variations; radiation-induced soft errors; soft error rate; Error analysis; FinFETs; Mathematical model; Radiation hardening (electronics); SRAM cells; Threshold voltage; Critical Charge; FinFET; Mismatch; Process Variations; Radiation; Radiation Hardening; SRAM; Single Event Upset; Soft Error Rate;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscale Architectures (NANOARCH), 2015 IEEE/ACM International Symposium on

Conference_Location

Boston, MA

Type

conf

DOI

10.1109/NANOARCH.2015.7180596

Filename

7180596