Title :
3-D Electrostatic Modeling and Impact of High-κ Control Oxide in Metal Nanocrystal Memory
Author :
Hou, Tuo-Hung ; Lee, Chungho ; Narayanan, Venkat ; Ganguly, Udayan ; Kan, Edwin C.
Author_Institution :
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA. Phone: 1-607-255-4181, Fax: 1-607-254-3508, Email: th273@cornell.edu
Keywords :
Distributed computing; Electrostatics; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Nanocrystals; Nonvolatile memory; Thickness control; Tunneling; Voltage;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305178
