Title :
A low-supply SI-cell using threshold control
Author :
Oliaei, Omid ; Loumeau, Patrick
Author_Institution :
Dept. Electron., Ecole Nat. Superieure des Telecommun., Paris, France
Abstract :
A low-voltage self-biased class AB memory cell for low-power high-precision applications is presented. Because of operation in class AB and due to self-biasing, the cell achieves a high dynamic range and a low harmonic distortion. A threshold control technique, applied to fix the cell quiescent current, is also described. A lossless integrator using this cell in a 0.5 μm technology shows a dynamic range of 15 bits, a THD lower than -90 dB for a clock frequency of 1 MHz and a power consumption of 0.23 mW
Keywords :
CMOS analogue integrated circuits; analogue storage; integrating circuits; low-power electronics; switched current circuits; 0.23 mW; 0.5 micron; 1 MHz; cell quiescent current; high dynamic range; lossless integrator; low harmonic distortion; low-power high-precision applications; low-supply SI cell; self-biased class AB memory cell; threshold control; Circuit noise; Clocks; Current mode circuits; Dynamic range; Energy consumption; Frequency; Harmonic distortion; Operational amplifiers; Switching circuits; Threshold voltage;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.814895
