Piezoelectric properties of SixGe1-xO2 crystals

Author

Balitsky, Vladimir ; Detaint, Jacques ; Armand, Pascale ; Papet, Philippe ; Balitsky, Denis

Author_Institution

Inst. of Exp. Miner. RAS, Chernogolovka

fYear

2007

fDate

May 29 2007-June 1 2007

Firstpage

704

Lastpage

710

Abstract

We report a first measurement of several elastic, piezoelectric, and dielectric characteristics of Si_0.93Ge_0.07O₂ crystals. This was made using the thickness modes of plates of several simple orientations, using normal and/or lateral excitation. Corrections accounting for energy trapping effect (finite electrode dimension and mass loading) or stray capacitances were made after the measurements when partially electroded plates were used. The most interesting features of Si_xGe_1-xO₂ crystals already demonstrated are mainly the extremely reduced OH concentration, the existence of compensated cuts, the larger piezoelectric constants and the increased temperature of the alpha-beta phase transition.

Keywords

dielectric materials; elastic constants; elasticity; electroplating; germanium compounds; piezoelectricity; polymorphic transformations; silicon compounds; SiGeO₂; dielectric characteristics; elastic characteristics; electroded plates; energy trapping effect; finite electrode dimension; mass loading; piezoelectric constants; piezoelectric properties; stray capacitances; Crystalline materials; Crystals; Dielectric materials; Dielectric measurements; Frequency measurement; Piezoelectric materials; Q factor; Resonance; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International

Conference_Location

Geneva

ISSN

1075-6787

Print_ISBN

978-1-4244-0646-3

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2007.4319166

Filename

4319166