DocumentCode :
3455371
Title :
Electrically-excited Infrared Emission from InN Nanowire Transistors
Author :
Chen, Jia ; Cheng, Guosheng ; Stern, Eric ; Reed, Mark A. ; Avouris, Phaedon
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598. Tel: 1-914-945-2046; Fax: 1-914-945-4531; email: chenjia@us.ibm.com
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
291
Lastpage :
292
Keywords :
Charge carrier density; Detectors; Electron emission; Electron mobility; Electron optics; Hot carriers; Indium; Lead compounds; Semiconductivity; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305187
Filename :
4097642
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3455371
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