• DocumentCode
    3455416
  • Title

    250 nm InGaAs/InP DHBTs w/650 GHz /spl conint/max and 420 GHz /spl conint/τ, operating above 30 mW/μm2

  • Author

    Lind, Erik ; Griffith, Zach ; Rodwell, Mark J.W. ; Fang, Xiao-Ming ; Loubychev, Dmitri ; Wu, Yu ; Fastenau, Joel M. ; Liu, Amy W K

  • Author_Institution
    Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
  • fYear
    2006
  • fDate
    26-28 June 2006
  • Firstpage
    3
  • Lastpage
    4
  • Keywords
    Breakdown voltage; Calibration; Contact resistance; Current density; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Ohmic contacts; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2006 64th
  • Conference_Location
    State College, PA, USA
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-9748-7
  • Type

    conf

  • DOI
    10.1109/DRC.2006.305190
  • Filename
    4097645
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3455416