Modeling of AlGaN/GaN HEMTs using field-plate technology

An analytical approach for calculating the electric field and designing field plates (FP) for reducing the peak electric field in the channel and at the surface of high electron mobility transistors (HEMTs) for a given gate and drain voltage is presented in this paper. The difference caused by the field plate is better demonstrated by the electrical field distribution in the channel. A 50% reduction of the maximum electric field, located at the drain side of the gate edge, is achieved by the introduction of the field plate, thus increasing the breakdown voltage.