DocumentCode :
3455652
Title :
Etching characteristics of TaN/HfO2 structure in Cl2/Ar and SF6/Cl2/Ar inductively coupled plasma
Author :
Shin, M.H. ; Na, S.W. ; Lee, N.-E. ; Kim, J.Y.
fYear :
2004
fDate :
Oct. 27-29, 2004
Firstpage :
278
Lastpage :
279
Keywords :
Argon; Coils; Control systems; Electrodes; Etching; Hafnium oxide; Plasma applications; Plasma chemistry; Plasma properties; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN :
4-99024720-5
Type :
conf
DOI :
10.1109/IMNC.2004.245650
Filename :
1459584
Link To Document :
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