DocumentCode :
3455709
Title :
Electron cyclotron resonance-reactive CH
4
/H
2
/Ar with constant Ar flow for high etch rate and improvement of etched surface morphology
Author :
Awa, Y. ; Ide, T. ; Arakawa, T. ; Haneji, N. ; Tada, K. ; Sugiyama, M. ; Shimizu, H. ; Shirnogaki, Y. ; Nakano, Y.
fYear :
2004
fDate :
Oct. 27-29, 2004
Firstpage :
280
Lastpage :
281
Keywords :
Argon; Cyclotrons; Dry etching; Gallium nitride; Polymers; Radio frequency; Resonance; Rough surfaces; Scanning electron microscopy; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN :
4-99024720-5
Type :
conf
DOI :
10.1109/IMNC.2004.245651
Filename :
1459585
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3455709
