DocumentCode :
3455721
Title :
Fabrication of 2.5 GHz SAW retiming filter with SiO2/ZnO/diamond structure
Author :
Nakahata, H. ; Kitabayashi, H. ; Fujii, S. ; Higaki, K. ; Tanabe, K. ; Seki, Y. ; Shikata, S.
Author_Institution :
Itami Res. Labs., Sumitomo Electr. Ind. Ltd., Hyogo, Japan
Volume :
1
fYear :
1996
fDate :
3-6 Nov 1996
Firstpage :
285
Abstract :
The variety of layered structures with a diamond film are expected to be applied for high-frequency SAW devices due to their high velocities. The SiO2/ZnO/IDT/diamond structure is one of the promising, especially for high-frequency and narrow-band filters. In this paper, the 1st mode SAW in the SiO2/ZnO/IDT/diamond structure was experimentally studied, and confirmed that it can provide zero temperature coefficient of frequency (TCF) as well as high velocity of 9,000 m/s. A 2.5 GHz narrow-band SAW filter was successfully fabricated with this structure with IDTs of 0.9 μm finger width, and it was shown that this filter has practical and superior characteristics for the 2.5 GHz retiming filter. Its insertion loss was 10 dB that is smaller than ever reported with quartz
Keywords :
UHF filters; diamond; interdigital transducers; silicon compounds; surface acoustic wave filters; timing; zinc compounds; 0.9 micron; 10 dB; 2.5 GHz; 9000 m/s; IDT; SAW retiming filter; SiO2-ZnO-C; SiO2/ZnO/diamond layered structure; fabrication; high-frequency narrow-band device; insertion loss; temperature coefficient of frequency; velocity; Fabrication; Fingers; Frequency; Insertion loss; Narrowband; SAW filters; Surface acoustic wave devices; Surface acoustic waves; Temperature; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location :
San Antonio, TX
ISSN :
1051-0117
Print_ISBN :
0-7803-3615-1
Type :
conf
DOI :
10.1109/ULTSYM.1996.583975
Filename :
583975
Link To Document :
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