• DocumentCode
    3455721
  • Title

    Fabrication of 2.5 GHz SAW retiming filter with SiO2/ZnO/diamond structure

  • Author

    Nakahata, H. ; Kitabayashi, H. ; Fujii, S. ; Higaki, K. ; Tanabe, K. ; Seki, Y. ; Shikata, S.

  • Author_Institution
    Itami Res. Labs., Sumitomo Electr. Ind. Ltd., Hyogo, Japan
  • Volume
    1
  • fYear
    1996
  • fDate
    3-6 Nov 1996
  • Firstpage
    285
  • Abstract
    The variety of layered structures with a diamond film are expected to be applied for high-frequency SAW devices due to their high velocities. The SiO2/ZnO/IDT/diamond structure is one of the promising, especially for high-frequency and narrow-band filters. In this paper, the 1st mode SAW in the SiO2/ZnO/IDT/diamond structure was experimentally studied, and confirmed that it can provide zero temperature coefficient of frequency (TCF) as well as high velocity of 9,000 m/s. A 2.5 GHz narrow-band SAW filter was successfully fabricated with this structure with IDTs of 0.9 μm finger width, and it was shown that this filter has practical and superior characteristics for the 2.5 GHz retiming filter. Its insertion loss was 10 dB that is smaller than ever reported with quartz
  • Keywords
    UHF filters; diamond; interdigital transducers; silicon compounds; surface acoustic wave filters; timing; zinc compounds; 0.9 micron; 10 dB; 2.5 GHz; 9000 m/s; IDT; SAW retiming filter; SiO2-ZnO-C; SiO2/ZnO/diamond layered structure; fabrication; high-frequency narrow-band device; insertion loss; temperature coefficient of frequency; velocity; Fabrication; Fingers; Frequency; Insertion loss; Narrowband; SAW filters; Surface acoustic wave devices; Surface acoustic waves; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
  • Conference_Location
    San Antonio, TX
  • ISSN
    1051-0117
  • Print_ISBN
    0-7803-3615-1
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1996.583975
  • Filename
    583975