Integrated finfet based sensing in a liquid environment

Author

Rigante, S. ; Wipf, M. ; Tarasov, A. ; Bouvet, D. ; Bedner, K. ; Stoop, R.L. ; Ionescu, A.M.

Author_Institution

Nanoelectronic Devices Lab., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

fYear

2013

fDate

16-20 June 2013

Firstpage

681

Lastpage

684

Abstract

This work presents an advanced electronic device, a high-k dielectric FinFET (Fin Field Effect Transistor), as new label-free sensor for enhanced sensing integrated circuits. FinFET-based sensors are demonstrated pH sensitive with high current variation per pH unit and significant considerations on the operation regime are carried out. Metal gate n-channel FinFETs, designed with the same architecture, are integrated and characterized together with the sensors, showing excellent transistor properties. All devices investigated in this paper are fabricated on bulk-silicon wafers with Fin width between 40 and 20 nm.

Keywords

MOSFET; chemical sensors; high-k dielectric thin films; Fin field effect transistor; Fin width; Si; bulk-silicon wafers; enhanced sensing integrated circuits; high-k dielectric FinFET; integrated FinFET based sensing; label-free sensor; liquid environment; metal gate n-channel FinFET; pH sensitive sensors; size 40 nm to 20 nm; Current measurement; FinFETs; Liquids; Logic gates; Metals; Sensors; Silicon; Fully-depleted FinFET; bulk-silicon; high-k dielectric; local SOI; microfluidic platform; pH sensing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6626858

Filename

6626858