Development of high average power EUV light source by laser produced xenon plasma

Summary form only given.Extreme ultraviolet lithography (EUVL) is the main candidate for the next generation lithography (NGL) to be introduced at the 45 nm node or beyond. The EUV light source requirements are very high, however, demanding an output power of 115 W and an energy stability of +-0.3 % (30, 50 pulses moving average). This specification enables a throughput of more than 100 waferhour and a dosage uniform enough for the critical dimension (CD) control. Long lifetime mirror technology is also required to minimize the operation cost. Improvement of the conversion efficiency (CE) from input irradiation laser to output EUV power is an important issue for high average power E W light source development. Laser parameter optimization for target, laser pulse energy, pulse duration and laser spot size are important to increase the conversion efficiency. In order to decrease debris and to reduce the supply of target material, the new target development is required. In this paper, we report about the progress of our high average power LPP E W light source development.