DocumentCode :
3455961
Title :
Dopant Activation In Poly-SI/sub1-x/Ge/subx/ At Low Temperature
Author :
Zhonghe Jin ; Zhiguo Meng ; Gururaj, B.A. ; Yeung, M. ; Hoi Sing Kwok ; Man Wong
fYear :
1997
fDate :
13-14 Feb. 1997
Firstpage :
65
Lastpage :
68
Keywords :
Boron; Conductivity; Crystallization; Electric variables measurement; Furnaces; Germanium silicon alloys; Hall effect; Rapid thermal annealing; Silicon germanium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Display, 1997., Proceedings of the Fourth Asian Symposium on
Conference_Location :
Hong Kong, China
Print_ISBN :
962-8273-01-9
Type :
conf
DOI :
10.1109/ASID.1997.631400
Filename :
631400
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3455961
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