Fully monolithic MEMS based thermal sensor in 22 nm CMOS technology for SoC thermal managemet

Author

Mahameed, R. ; Abdelmoneum, M. ; Duarte, Duarte ; Taylor, Gareth ; Choi, Sung-Jin ; Brain, R. ; Morrow, Philip ; Fischer, P.

Author_Institution

Intel Archit. Group, Hillsboro, OR, USA

fYear

2013

fDate

16-20 June 2013

Firstpage

734

Lastpage

737

Abstract

A novel fully monolithic MEMS based thermal sensor for high resolution thermal management is demonstrated in a 22 nm CMOS technology. Top metal layers are used as the structural material for the MEMS clamped-clamped beam resonators used as a thermal sensor. Using the top metal layers avoids any disruption to the complex fin FET transistor front end where the MEMS technology is not really compatible and additionally exploits the thermal characteristics of the device [1-2]. By tracking the resonance frequency of the copper resonator, the temperature of the chip can be tracked to a sub degree granularity with frequency resolution of 6.7 kHz/°C at 15 MHz.

Keywords

CMOS integrated circuits; field effect transistors; micromechanical resonators; microsensors; monolithic integrated circuits; system-on-chip; temperature sensors; thermal management (packaging); CMOS technology; MEMS clamped-clamped beam resonator; SOC; complex fin FET transistor front end; frequency 15 MHz; metal layer; monolithic MEMS based thermal sensor; resonance frequency tracking; size 22 nm; structural material; thermal characteristics; thermal management; CMOS integrated circuits; Laser beams; Measurement by laser beam; Metals; Micromechanical devices; Temperature sensors; Metal MEMS; RF Resonators; Resonant Sensors; Thermal Sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6626871

Filename

6626871