Title :
MHz repetition rate solid-state driver for high current induction accelerators
Author :
Kirbie, H. ; Caporaso, G. ; Goerz, D. ; Hanks, R. ; Hickman, B. ; Lee, B. ; Brooksby, C. ; Saethre, R.
Author_Institution :
Lawrence Livermore Nat. Lab., CA, USA
Abstract :
A research team from the Lawrence Livermore National Laboratory and Bechtel Nevada Corporation is developing an all solid-state power source for high-current induction accelerators. The original power system design, developed for heavy-ion fusion accelerators, is based on the simple idea of using an array of field effect transistors (FETs) to switch energy from a pre-charged capacitor bank to an induction accelerator cell. Recently, that idea has been expanded to accommodate the greater power needs of a new class of high-current electron accelerators for advanced radiography. For this purpose, we developed a 3-stage induction adder that uses over 4000 field effect transistors to switch peak voltages of 45 kV at currents up to 4.8 kA, with pulse repetition rates of up to 2 MHz. This radically advanced power system can generate a burst of five or more pulses that vary from 200 ns to 2 μs at a duty cycle of up to 25%. Our new source is precise, robust, flexible, and exceeds all previous drivers for induction machines by a factor of 400 in repetition rate and a factor of 1000 in duty cycle
Keywords :
accelerator RF systems; electron accelerators; linear accelerators; power field effect transistors; 45 kV; MHz repetition rate solid-state driver; advanced radiography; field effect transistors; heavy-ion fusion accelerators; high current induction accelerators; high-current electron accelerators; induction accelerator cell; induction machines; pre-charged capacitor bank; solid-state power source; three-stage induction adder; Capacitors; Electron accelerators; FETs; Laboratories; Power systems; Pulse power systems; Radiography; Solid state circuits; Switches; Voltage;
Conference_Titel :
Particle Accelerator Conference, 1999. Proceedings of the 1999
Conference_Location :
New York, NY
Print_ISBN :
0-7803-5573-3
DOI :
10.1109/PAC.1999.795778