Title :
Noise in a-Si:H p-i-n detector diodes
Author :
Cho, Gyuseong ; Qureshi, S. ; Drewery, J.S. ; Jing, T. ; Kaplan, S.N. ; Lee, H. ; Mireshghi, A. ; Perez-Mendez, V. ; Wildermuth, D.
Author_Institution :
Lawrence Berkeley Lab., California Univ., CA, USA
Abstract :
Noise from a-Si:H p-i-n diodes (5 approximately 50- mu m thick) under reverse bias was investigated. The current-dependent 1/f-type noise was found to be the main noise composition at high bias. At low bias, the thermal noise from a series resistance of the p-layer and from metallic contacts is the dominant noise source, which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by approximately a factor of 2. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component for zero-biased diodes.<>
Keywords :
amorphous semiconductors; annealing; elemental semiconductors; hydrogen; p-i-n diodes; semiconductor device noise; silicon; thermal noise; 1/f-type noise; 5 to 50 micron; Si:H; a-Si:H p-i-n detector diodes; annealing; low bias; noise; p-layer resistance; resistive noise; reverse bias; shaping time independent noise; thermal noise; zero-biased; Background noise; Noise measurement; Noise shaping; P-i-n diodes; PIN photodiodes; Pulse amplifiers; Pulse measurements; Pulse shaping methods; Radiation detectors; Thermal resistance;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-0513-2
DOI :
10.1109/NSSMIC.1991.258908
