Using a passive GaAs matching network in the fabrication of broadband microwave power amplifiers

Author

Garmash, S.V. ; Kistchinsky, A.A. ; Lapin, V.G. ; Rogozhnikova, M.S.

Author_Institution

SCRRTI, Moscow, Russia

fYear

1999

fDate

13-16 Sept. 1999

Firstpage

5

Lastpage

8

Abstract

Possibilities, advantages and disadvantages of the use of GaAs passive matching networks in the construction of broadband microwave power amplifiers are discussed. The technology of fabrication and design features of passive matching chips are described. The topologies of passive matching chips and electrical characteristics of broadband two-stage power amplifiers in the 4-8 GHz and 4-11 GHz bands with an output power 0.65-1.6 W are presented.

Keywords

III-V semiconductors; MMIC power amplifiers; gallium arsenide; impedance matching; integrated circuit design; wideband amplifiers; 4 to 11 GHz; GaAs; broadband microwave power amplifiers; electrical characteristics; network topologies; output power; passive matching network; two-stage power amplifiers; Broadband amplifiers; Fabrication; Gallium arsenide; Hidden Markov models; IEEE catalog; Intelligent networks; Microwave amplifiers; Organizing; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]

Conference_Location

Sevastopol, Crimea, Ukraine

Print_ISBN

966-572-003-1

Type

conf

DOI

10.1109/CRMICO.1999.815129

Filename

815129