Tip-based graphene etching for MEMS resonator frequency trimming

Author

Hosseinzadegan, H. ; Lal, Amit

Author_Institution

SonicMEMS Lab., Cornell Univ., Ithaca, NY, USA

fYear

2013

fDate

16-20 June 2013

Firstpage

798

Lastpage

801

Abstract

We report the first-ever demonstration of ultra precise MEMS resonator frequency trimming by atomic-level graphene removal using tip-based electrolytic etching. We placed the graphene films over the electrodes defined over lows-stress Si_xN_y membranes using a film transfer method. In this method, the graphene film is polycrystalline with a grain size in the range 50-800 nm, and can be two or three layers thick. Removing nanometers of graphene film, results in atomic-scale mass control. Using the graphene removal method, we report frequency shifts as low as 7.6 ppm by etching graphene films through STM based anodic reaction.

Keywords

electrochemical electrodes; etching; graphene; membranes; microfabrication; micromechanical resonators; scanning tunnelling microscopy; silicon compounds; thin film devices; MEMS resonator frequency trimming; STM based anodic reaction; Si_xN_y-C; atomic-level graphene film removal; atomic-scale mass control; electrode; film transfer method; lows-stress membranes; polycrystalline; size 50 nm to 800 nm; tip-based electrolytic etching; Etching; Films; Frequency measurement; Graphene; Micromechanical devices; Resonant frequency; Tuning; Graphene; MEMS; frequency tuning; resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6626887

Filename

6626887