A 3V CMOS-MEMS oscillator in 0.35μm CMOS technology

Author

Verd, Jaume ; Uranga, A. ; Segura, Jaume ; Barniol, N.

Author_Institution

Dept. of Phys. (GSE), Univ. de les Illes Balears, Palma de Mallorca, Spain

fYear

2013

fDate

16-20 June 2013

Firstpage

806

Lastpage

809

Abstract

This paper presents the design, fabrication and characterization of a fully monolithic 11-MHz oscillator circuit operating with a low voltage MEMS resonator biased below the nominal 3.3V operation of the commercial 0.35-μm CMOS technology used to fabricate the device. The CMOS-MEMS oscillator comprises a polysilicon double-ended tuning fork (DETF) resonator embedded in a differential Pierce oscillator scheme. The device is suitable for RF applications and ultrasensitive mass sensing.

Keywords

CMOS integrated circuits; micromechanical devices; oscillators; resonators; CMOS-MEMS oscillator; differential Pierce oscillator scheme; frequency 11 MHz; fully monolithic oscillator circuit characterization; fully monolithic oscillator circuit design; fully monolithic oscillator circuit fabrication; low voltage MEMS resonator; polysilicon DETF resonator; polysilicon double-ended tuning fork resonator; size 0.35 mum; ultrasensitive mass sensing; voltage 3 V; voltage 3.3 V; CMOS integrated circuits; CMOS technology; Fabrication; Micromechanical devices; Noise; Oscillators; Sensors; CMOS-MEMS; MEMS-based Oscillator; Radio-Frequency MEMS; Sensing System On-Chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6626889

Filename

6626889