Application of the rapid thermal process: sintering the sputtered aluminum/silicon contact in silicon detector fabrication

Author

Chen, Wei ; Li, Zheng ; Kraner, H.W.

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

fYear

1991

fDate

2-9 Nov. 1991

Firstpage

95

Abstract

Rapid thermal process (RTP) sintering has been used in p/sup +/-n junction detector fabrication. For the same thickness of aluminum film and for the same RTP sintering condition, the leakage current of the p/sup +/-n junction detector with a sputtered Al gate showed at least a 50% improvement, and no spiking phenomena were observed. The flatband voltages of MOS capacitors with a sputtered Al gate after RTP sintering in 4% H/sub 2//N/sub 2/ ambient gas become comparable with those with an evaporated Al gate. RTP sintering has also been found to passivate the oxide damage introduced by /sup 60/Co gamma radiation.<>

Keywords

aluminium; capacitors; electrical contacts; leakage currents; metal-insulator-semiconductor devices; semiconductor counters; semiconductor-metal boundaries; silicon; sintering; Al-Si contact; MOS capacitors; Si detector; fabrication; flatband voltages; gamma radiation; leakage current; p/sup +/-n junction detector; rapid thermal process; sintering; sputtered Al gate; Aluminum; Detectors; Hydrogen; Leakage current; Metallization; Rapid thermal processing; Semiconductor films; Silicon; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE

Conference_Location

Santa Fe, NM, USA

Print_ISBN

0-7803-0513-2

Type

conf

DOI

10.1109/NSSMIC.1991.258913

Filename

258913