Title :
Application of the rapid thermal process: sintering the sputtered aluminum/silicon contact in silicon detector fabrication
Author :
Chen, Wei ; Li, Zheng ; Kraner, H.W.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Abstract :
Rapid thermal process (RTP) sintering has been used in p/sup +/-n junction detector fabrication. For the same thickness of aluminum film and for the same RTP sintering condition, the leakage current of the p/sup +/-n junction detector with a sputtered Al gate showed at least a 50% improvement, and no spiking phenomena were observed. The flatband voltages of MOS capacitors with a sputtered Al gate after RTP sintering in 4% H/sub 2//N/sub 2/ ambient gas become comparable with those with an evaporated Al gate. RTP sintering has also been found to passivate the oxide damage introduced by /sup 60/Co gamma radiation.<>
Keywords :
aluminium; capacitors; electrical contacts; leakage currents; metal-insulator-semiconductor devices; semiconductor counters; semiconductor-metal boundaries; silicon; sintering; Al-Si contact; MOS capacitors; Si detector; fabrication; flatband voltages; gamma radiation; leakage current; p/sup +/-n junction detector; rapid thermal process; sintering; sputtered Al gate; Aluminum; Detectors; Hydrogen; Leakage current; Metallization; Rapid thermal processing; Semiconductor films; Silicon; Sputtering; Temperature;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-0513-2
DOI :
10.1109/NSSMIC.1991.258913
