New nonlinear device model for microwave power GaN HEMTs

This paper presents a new nonlinear device model, for microwave power GaN HEMTs, amenable for integration into a commercial harmonic balance simulator. All the steps taken to extract it are explained, starting with the extrinsic elements´ determination and ending with the intrinsic ones. This model was validated by comparing measured and simulated output power and intermodulation distortion data of a GaN HEMT. Very good agreement was obtained from small- to large-signal excitation regimes.