DocumentCode :
3456433
Title :
Amorphous Ge bipolar blocking contacts on Ge detectors
Author :
Luke, P.N. ; Cork, C.P. ; Madden, N.W. ; Rossington, C.S. ; Wesela, M.F.
Author_Institution :
Lawrence Berkeley Lab., California Univ., CA, USA
fYear :
1991
fDate :
2-9 Nov. 1991
Firstpage :
85
Abstract :
The authors report on the performance of high-purity Ge radiation detectors with amorphous Ge (a-Ge) contacts fabricated using RF sputtering techniques. Electrical contacts formed using sputtered a-Ge films on high-purity Ge crystals were found to exhibit good blocking behavior in both polarities with low leakage currents. The a-Ge contacts have thin dead layers associated with them and can be used in place of lithium-diffused, ion-implanted or Schottky barrier contacts on Ge radiation detectors. Multielectrode detectors can be fabricated with very simple processing steps using these contacts.<>
Keywords :
amorphous semiconductors; electrical contacts; elemental semiconductors; germanium; semiconductor counters; semiconductor junctions; Ge detectors; Ge-Ge; amorphous Ge contact; bipolar blocking contacts; leakage currents; Amorphous materials; Boron; Contacts; Crystals; Fabrication; Ion implantation; Leakage current; Lithium; Radiation detectors; Schottky barriers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-0513-2
Type :
conf
DOI :
10.1109/NSSMIC.1991.258915
Filename :
258915
Link To Document :
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