Title :
Designing of LNA with protection from high level input power
Author :
Abolduyev, L.M. ; Vald-Perlov, V.M.
Abstract :
In designing LNA it is necessary to conduct optimisation of scheme and topology of amplifier, choice of active element, protection, as well as reliability and price. Possible power level at the input of FET or HEMT LNA is chosen. Graphs correspond to average technological variant of GaAs FET or HEMT. Possible diffuse impulse power in GaAs transistor is discussed with respect to constant power.
Keywords :
HEMT circuits; circuit reliability; field effect transistor circuits; microwave amplifiers; microwave circuits; FET; HEMT; LNA; diffuse impulse power; high level input power; reliability; topology; Gallium arsenide; Helium; IEEE catalog; Organizing; Protection;
Conference_Titel :
Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-572-003-1
DOI :
10.1109/CRMICO.1999.815143
