Title :
Low noise microwave FETs
Author :
Kohan, V.P. ; Ryzhakova, L.K. ; Rengevych, O.E. ; Stovpovoy, M.A.
Author_Institution :
OSA Saturn, Kiev, Ukraine
Abstract :
The results of design and fabrication of GaAs FETs are presented. These FETs can serve as active elements for hybrid ICs with operating frequencies of 4 and 12 GHz. By cooling the FETs down to 80 K one can substantially improve their microwave parameters.
Keywords :
III-V semiconductors; S-parameters; cryogenic electronics; gallium arsenide; microwave field effect transistors; 12 GHz; 4 GHz; 80 K; GaAs; active elements; cooling; cryogenics; hybrid ICs; microwave FETs; microwave parameters; operating frequencies; Additive white noise; Electrodes; Fabrication; Frequency; Gallium arsenide; Gold; Lithography; Microwave FETs; Semiconductor device noise; Temperature sensors;
Conference_Titel :
Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-572-003-1
DOI :
10.1109/CRMICO.1999.815145
