Title :
Impact of ion-implantation damage and transient-enhanced diffusion on advanced bipolar technologies-comparisons between experiments and non-equilibrium diffusion modeling
Author :
Baccus, Bruno ; Wada, Tetsunori ; Shigyo, Naoyuki ; Norishima, Masayuki ; Iwai, Hiroshi
Author_Institution :
ISEN, Lille, France
Abstract :
The influence of ion-implantation damage on the formation of emitter and base in advanced bipolar technologies is studied. A novel nonequilibrium diffusion model has been developed to analyze this issue. By comparing simulation and experiments on a 0.5-μm BiCMOS technology, transient-enhanced diffusion phenomena for rapid thermal anneal and furnace annealing are discussed. Two-dimensional effects are reported
Keywords :
BIMOS integrated circuits; annealing; bipolar integrated circuits; diffusion in solids; integrated circuit technology; ion implantation; semiconductor device models; 0.5 micron; BiCMOS technology; RTA; advanced bipolar technologies; base formation; emitter formation; furnace annealing; ion-implantation damage; nonequilibrium diffusion model; rapid thermal anneal; transient-enhanced diffusion; two-dimensional effects; Boron; Furnaces; Impurities; Ion implantation; Poisson equations; Semiconductor devices; Semiconductor process modeling; Simulated annealing; Temperature distribution; Ultra large scale integration;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.161002
