Title :
Research results of the radio-frequency characteristics of microwave devices
Author :
Krutov, A.V. ; Mitlin, V.A. ; Rebrov, A.S.
Author_Institution :
SRPC Istok, Russia
Abstract :
In this paper the research results of the radio-frequency characteristics of microwave devices are presented. The calculations were conducted with the application of a nonlinear physical-based model of a GaAs field-effect transistor with a Schottky barrier (MESFET). The comparative characteristics for the simulation analysis were extracted from measured S-parameters (Materka model), and the nonlinear physical model based on the analysis of the parameters of the semiconductor structure and the geometrical dimensions of the electrodes of the transistor, is deduced. Linear (gain, input/output VSWR) and nonlinear (output power, intermodulation distortion) parameters of a power amplifier are surveyed. The good coincidence of calculated and measured parameters is shown.
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; microwave field effect transistors; semiconductor device models; GaAs; GaAs MESFET; IMD; Materka model; RF characteristics; field-effect transistor; input/output VSWR; intermodulation distortion; linear parameters; measured S-parameters; microwave devices; nonlinear parameters; nonlinear physical model; output power; power amplifier; radiofrequency characteristics; Analytical models; Distortion measurement; FETs; Gallium arsenide; MESFETs; Microwave devices; Power amplifiers; Radio frequency; Schottky barriers; Solid modeling;
Conference_Titel :
Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-572-003-1
DOI :
10.1109/CRMICO.1999.815146
