Title :
An addition to the influence of harmonic loads on MESFET amplifiers output power
Author_Institution :
SCRRTI, Moscow, Russia
Abstract :
The aim of this paper is to present results of a 2 GHz amplifier´s output power calculations, up to phase of load reflection coefficient at 4 GHz and 6 GHz frequency. The amplifier is based on two MESFET devices, each having a 3.6 mm gate width and 2 GHz operating frequency. Contours of maximum and minimum output power have been determined. This paper describes the method of design of the amplifier´s output circuit with frequency crossing 2:1 (2-4 GHz), which gives a high output power at 4 GHz without additional power loss, which is linked to the load phase at the second harmonic.
Keywords :
MESFET circuits; UHF power amplifiers; harmonics; microwave power amplifiers; 2 Hz to 6 GHz; 3.6 mm; MESFET amplifiers; amplifiers output power; harmonic loads; output circuit design; IEEE catalog; MESFETs; Organizing; Power amplifiers; Power generation;
Conference_Titel :
Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-572-003-1
DOI :
10.1109/CRMICO.1999.815148
