DocumentCode :
3456715
Title :
Visible light emission from silicon: a quantum effect in highly porous materials
Author :
Herino, R. ; Billat, S. ; Bsiesy, A. ; Gaspard, F. ; Ligeon, M. ; Muller, F. ; Mihalcescu, I. ; Romestain, R. ; Vial, J.
Author_Institution :
Lab. de Spectrometrie Phys., Univ. Joseph Fourier de Grenoble, Saint Martin d´´Heres, France
fYear :
1991
fDate :
2-9 Nov. 1991
Firstpage :
35
Abstract :
Although crystalline silicon is not expected to emit light in the visible range, bright red emission has been reported for high-porosity porous silicon films. This discovery, which opens the door to silicon-based optoelectronics, has raised great interest in the scientific community. The authors present the state of art of the question after a year of investigations. After a short presentation of the main features of porous silicon, they describe the different characteristics of the photoluminescence phenomena in some detail. The evolution of the emission spectra with the properties of the material which can be varied by chemical or electrochemical methods is presented. Results confirm that quantum size effects within the crystalline material can be responsible for the light emission far above the band gap of silicon. The relatively high quantum efficiencies are discussed in terms of material properties (oxidation level, surface passivation) and of radiative and nonradiative recombination rates. It is shown that, at room temperature, the luminescence decay is dominated by nonradiative processes. Bright electroluminescence has also been evidenced during anodic oxidation of the material.<>
Keywords :
electroluminescence; elemental semiconductors; oxidation; passivation; photoluminescence; porous materials; semiconductor thin films; silicon; 293 K; anodic oxidation; electroluminescence; highly porous materials; oxidation; photoluminescence; porous Si films; quantum effect; quantum efficiencies; quantum size effects; recombination rates; red emission; semiconductor; surface passivation; visible light emission; Art; Chemicals; Crystalline materials; Crystallization; Material properties; Oxidation; Photoluminescence; Photonic band gap; Semiconductor films; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-0513-2
Type :
conf
DOI :
10.1109/NSSMIC.1991.258927
Filename :
258927
Link To Document :
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