• DocumentCode
    3456725
  • Title

    Area efficient time-shared FIR filters in nanoscale CMOS

  • Author

    Michael, Navin ; Vinod, A.P. ; Moy, Christophe ; Palicot, Jacques

  • Author_Institution
    Sch. of Comput. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2010
  • fDate
    21-23 June 2010
  • Firstpage
    54
  • Lastpage
    59
  • Abstract
    Parallelism has been used in the past as a high level architectural transformation for reducing the dynamic power consumption of FIR filters. However increasing the level of parallelism incurs an area penalty. In nanoscale CMOS circuits, leakage power is emerging as the dominant mode of power consumption. Leakage power is strongly correlated to the area and the total number of leaking transistors. This requires the classical area vs. power tradeoffs to be revisited. In addition to reducing the dynamic power, the increased timing slacks in the circuits with a higher degree of parallelism, can also be exploited for implementing the circuit using slower, low-leakage transistors. Hence the efficiency with which an architecture can trade area for increased timing slack is an important consideration for low power design in nanoscale CMOS. The current work shows that the algorithmic strength reduction achieved by fast filter algorithms (FFAs) can be used to design a class of time-shared FIR filters which are more area efficient than traditional structures, under specific conditions.
  • Keywords
    CMOS digital integrated circuits; FIR filters; low-power electronics; fast filter algorithms; high level architectural transformation; leakage power; low power design; low-leakage transistors; nanoscale CMOS circuits; time-shared FIR filters; Algorithm design and analysis; CMOS technology; Circuits; Costs; Energy consumption; Finite impulse response filter; Parallel processing; Power engineering computing; Threshold voltage; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Green Circuits and Systems (ICGCS), 2010 International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-6876-8
  • Electronic_ISBN
    978-1-4244-6877-5
  • Type

    conf

  • DOI
    10.1109/ICGCS.2010.5543098
  • Filename
    5543098