Experimental characteristics of GaAs-harmonic generators of mm-band

Author

Dyadchenko, A.V. ; Mishnyov, A.A. ; Prokhorov, E.D. ; Beletsky, N.I. ; Polyansky, N.E.

Author_Institution

Kharkiv State Univ., Ukraine

fYear

1999

fDate

13-16 Sept. 1999

Firstpage

93

Lastpage

94

Abstract

Experimental samples of Gunn-diodes had m-n/sup +/-n-n/sup +/-m pattern and were made on the base of epitaxial films of n-GaAs, on low-impedance n/sup +/-substrate with given impurity concentration. The Gunn-diodes with given lengths of active n-area were made. Length of n-area was selected from an operation condition of the diode in transient-time mode on a base frequency. The Gunn-diodes, designed and manufactured in such a way, had a packageless design.

Keywords

Gunn oscillators; III-V semiconductors; gallium arsenide; harmonic oscillators (circuits); impurity distribution; millimetre wave diodes; millimetre wave generation; millimetre wave oscillators; semiconductor epitaxial layers; GaAs; Gunn-diodes; epitaxial films; harmonic generators; impurity concentration; low-impedance n/sup +/-substrate; operation condition; packageless design; transient-time mode; Character generation; Diodes; Frequency; Gallium arsenide; IEEE catalog; Impurities; Kilns; Manufacturing; Organizing; Packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]

Conference_Location

Sevastopol, Crimea, Ukraine

Print_ISBN

966-572-003-1

Type

conf

DOI

10.1109/CRMICO.1999.815157

Filename

815157