Title :
Physical characterizations of α-GaPO4 single crystals grown by the flux method
Author :
Beaurain, M. ; Armand, Pascale ; Balitsky, D. ; Papet, Ph ; Détaint, J.
Author_Institution :
Inst. Charles Gerhardt Montpellier, Montpellier
fDate :
May 29 2007-June 1 2007
Abstract :
Hexagonal gallium orthophosphate crystals have been obtained by spontaneous nucleation using the slow cooling method from X2Mo3O10 fluxes with X=Li, K. Infrared transmission measurements have revealed samples without significant hydroxyl groups and thermal analyses have pointed out the total reversibility state of the phase transition α-quartz GaPO4 harr β-cristobalite GaPO4. The first measurement of several elastic constants made on α-GaPO4 material grown with the flux technique, using plates of simple orientations, was undertaken. The values found for these constants were slightly higher to those measured on hydro-thermally grown GaPO4 crystals.
Keywords :
amorphous state; cooling; crystal growth from solution; elastic constants; gallium compounds; infrared spectra; lithium compounds; nucleation; phase transformations; piezoelectric materials; potassium compounds; thermal analysis; GaPO4; K2Mo3O10; Li2Mo3O10; elastic constants measurement; hexagonal gallium orthophosphate crystals; hydro-thermally grown crystals; infrared transmission measurements; phase transition; physical characterizations; single crystal growth by flux method; slow cooling method; spontaneous nucleation; thermal analysis; total reversibility state; Cooling; Crystalline materials; Crystallization; Crystals; Electrodes; Infrared spectra; Phase measurement; Piezoelectric materials; Pollution measurement; Temperature;
Conference_Titel :
Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International
Conference_Location :
Geneva
Print_ISBN :
978-1-4244-0646-3
Electronic_ISBN :
1075-6787
DOI :
10.1109/FREQ.2007.4319245
