First-order quasi-phase-matched reflection-second-harmonic generation from GaAs/AlAs multilayers

Author

Xiaodong Mu ; Ding, Y.J. ; Haeyeon Yang ; Salamo, G.J.

Author_Institution

Dept. of Phys., Arkansas Univ., Fayetteville, AR, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

551

Lastpage

552

Abstract

Summary form only given. GaAs and AlGaAs have very large second-order susceptibilities. To achieve efficient frequency conversion, multilayers have been used to achieve, quasi-phase matching (QPM). Our investigation of the reflection-SHG from multilayers serves as a first step towards eventual applications of GaAs/AlGaAs multilayers for generating and amplifying mid-IR waves based on a novel configuration.

Keywords

aluminium compounds; gallium arsenide; infrared sources; nonlinear optical susceptibility; optical harmonic generation; optical multilayers; optical phase matching; semiconductor thin films; GaAs-AlGaAs; GaAs/AlAs multilayers; GaAs/AlGaAs multilayers; efficient frequency conversion; first-order quasi-phase-matched reflection-second-harmonic generation; quasi-phase matching; reflection-SHG; very large second-order susceptibilities; Fluctuations; Frequency conversion; Gallium arsenide; Laser excitation; Nonhomogeneous media; Polarization; Reflection; Reflectivity; Time measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.948155

Filename

948155