DocumentCode :
34570
Title :
Proposal for Graphene–Boron Nitride Heterobilayer-Based Tunnel FET
Author :
Ghosh, Ram Krishna ; Mahapatra, Santanu
Author_Institution :
Dept. of Electron. Syst. Eng., Indian Inst. of Sci., Bangalore, India
Volume :
12
Issue :
5
fYear :
2013
fDate :
Sept. 2013
Firstpage :
665
Lastpage :
667
Abstract :
We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor. We first study the imaginary band structure of hexagonal and Bernal-stacked heterobilayers by density functional theory, which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin approximation. It is shown that the direct BTBT is probable for a certain interlayer spacing of the G-BN which depends on the stacking orders.
Keywords :
III-V semiconductors; band structure; boron compounds; density functional theory; field effect transistors; graphene; stacking; tunnel transistors; wide band gap semiconductors; BTBT current; Bernal-stacked heterobilayers; C-BN; Wentzel-Kramers-Brillouin approximation; density functional theory; gate-controlled direct band-to-band tunneling current; graphene-boron nitride heterobilayer-based tunnel FET; hexagonal heterobilayers; imaginary band structure; interlayer spacing; stacking orders; tunnel field effect transistor; Graphene; Logic gates; Materials; Photonic band gap; Stacking; Transistors; Tunneling; Band-to-band tunneling; complex band structure; graphene; tunnel field effect transistor (TFET);
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2013.2272739
Filename :
6557524
Link To Document :
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