Title :
X-band GaAs mHEMT LNAs with 0.5 dB noise figure
Author :
Heins, M.S. ; Carroll, J.M. ; Kao, M. ; Delaney, J. ; Campbell, C.F.
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
Two X-band LNA ICs have been demonstrated using a 0.15 μm metamorphic GaAs HEMT technology. The amplifiers have an average noise figure of 0.5 dB and power gain greater than 31 dB from 7-10 GHz. A current-shared version had gain flatness better than 1 dB, return losses greater than 11 dB, and power consumption of 42 mW. A high linearity version has an output third-order intercept point greater than 20.5 dBm from 6-12 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium arsenide; integrated circuit design; integrated circuit noise; microwave integrated circuits; 0.15 micron; 0.5 dB; 42 mW; GaAs; LNA integrated circuit; MMIC amplifiers; X-band mHEMT LNA; amplifier noise; gain flatness; high linearity; metamorphic HEMT technology; microwave integrated circuits; noise figure; power consumption; power gain; return loss; third-order intercept point; Breakdown voltage; Broadband amplifiers; Gallium arsenide; Impedance matching; Integrated circuit noise; Microwave devices; Noise figure; Optical amplifiers; Substrates; mHEMTs;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1335827
