Title :
Wideband AlGaN/GaN HEMT MMIC low noise amplifier
Author :
Ellis, Grant A. ; Moon, Jeong-sun ; Wong, Danny ; Micovic, Miroslav ; Kurdoghlian, Ara ; Hashimoto, Paul ; Hu, Ming
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
A 3-18 GHz AlGaN/GaN high electron mobility transistor low noise amplifier on silicon carbide is reported. The measured gain (S21) is 20 dB +/- 2.5 dB between 3-18 GHz. The minimum measured noise figure is 2.4 dB. To the authors knowledge, this is the highest gain reported over multiple octaves up to 18 GHz using GaN technology.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; high electron mobility transistors; integrated circuit design; integrated circuit noise; silicon compounds; wide band gap semiconductors; 2.4 dB; 3 to 18 GHz; AlGaN-GaN; MMIC low noise amplifier; high electron mobility transistor; Aluminum gallium nitride; Broadband amplifiers; Gain measurement; Gallium nitride; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Noise measurement; Silicon carbide;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1335828
