DocumentCode :
3457133
Title :
An ultra-thin bendable Si-monolithic imaging test sensor
Author :
Dogiamis, G.C. ; Hafner, Jurgen ; Mokwa, W. ; Hosticka, B.J. ; Grabmaier, A.
Author_Institution :
Electron. Components & Syst., Univ. Duisburg Essen, Duisburg, Germany
fYear :
2013
fDate :
16-20 June 2013
Firstpage :
964
Lastpage :
967
Abstract :
In this work an ultra-thin bendable imaging test structure is presented and experimental results are put forward. The deployed design and layout rules in order to achieve an independent operation on the applied mechanical stress are discussed. Moreover, experimental results of the optical characteristics of standard n+/p photodiodes on ultra-thin silicon chips embedded into a polyimide foil under several bending configurations are discussed and presented.
Keywords :
CMOS image sensors; bending; elemental semiconductors; flexible electronics; integrated circuit layout; integrated circuit testing; monolithic integrated circuits; photodiodes; polymer films; silicon; stress analysis; Si; bending configuration; design rule; layout rule; mechanical stress; optical characteristics; polyimide foil; standard n+/p photodiode; ultra thin bendable Si monolithic imaging test sensor; Arrays; Image sensors; Optical imaging; Optical sensors; Photodiodes; Silicon; Stress; Bendable image sensor; mechanical stress; photodiodes; ultra-thin chips;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location :
Barcelona
Type :
conf
DOI :
10.1109/Transducers.2013.6626929
Filename :
6626929
Link To Document :
بازگشت