An ultra-thin bendable Si-monolithic imaging test sensor

Author

Dogiamis, G.C. ; Hafner, Jurgen ; Mokwa, W. ; Hosticka, B.J. ; Grabmaier, A.

Author_Institution

Electron. Components & Syst., Univ. Duisburg Essen, Duisburg, Germany

fYear

2013

fDate

16-20 June 2013

Firstpage

964

Lastpage

967

Abstract

In this work an ultra-thin bendable imaging test structure is presented and experimental results are put forward. The deployed design and layout rules in order to achieve an independent operation on the applied mechanical stress are discussed. Moreover, experimental results of the optical characteristics of standard n⁺/p photodiodes on ultra-thin silicon chips embedded into a polyimide foil under several bending configurations are discussed and presented.

Keywords

CMOS image sensors; bending; elemental semiconductors; flexible electronics; integrated circuit layout; integrated circuit testing; monolithic integrated circuits; photodiodes; polymer films; silicon; stress analysis; Si; bending configuration; design rule; layout rule; mechanical stress; optical characteristics; polyimide foil; standard n+/p photodiode; ultra thin bendable Si monolithic imaging test sensor; Arrays; Image sensors; Optical imaging; Optical sensors; Photodiodes; Silicon; Stress; Bendable image sensor; mechanical stress; photodiodes; ultra-thin chips;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6626929

Filename

6626929