Title :
Bulk acoustic wave resonators 3D simulation
Author :
Giraud, Sylvain ; Bila, Stéphane ; Aubourg, Michel ; Cros, Dominique
Author_Institution :
UMR CNRS 6172 123, Limoges
fDate :
May 29 2007-June 1 2007
Abstract :
This article discusses numerical simulations of thin film bulk acoustic wave resonators. FBAR simulation with 1D analytical model permits to quickly determine resonator layers thicknesses that correspond to the objective resonant frequency. 3D finite elements method permits to investigate the effect of the electrode shape on the spurious modes that are present in the electrical impedance. In order to reduce or to suppress those modes, solutions have to be investigated.
Keywords :
acoustic resonators; bulk acoustic wave devices; electric impedance; electrodes; finite element analysis; thin film devices; 1D analytical model; 3D finite elements method; FBAR simulation; electrical impedance; electrode shape effect; numerical simulations; resonant frequency; spurious modes; thin film bulk acoustic wave resonators; Acoustic waves; Analytical models; Electrodes; Film bulk acoustic resonators; Finite element methods; Impedance; Numerical simulation; Resonant frequency; Shape; Transistors;
Conference_Titel :
Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International
Conference_Location :
Geneva
Print_ISBN :
978-1-4244-0646-3
Electronic_ISBN :
1075-6787
DOI :
10.1109/FREQ.2007.4319258
