Bulk acoustic wave resonators 3D simulation

Author

Giraud, Sylvain ; Bila, Stéphane ; Aubourg, Michel ; Cros, Dominique

Author_Institution

UMR CNRS 6172 123, Limoges

fYear

2007

fDate

May 29 2007-June 1 2007

Firstpage

1147

Lastpage

1151

Abstract

This article discusses numerical simulations of thin film bulk acoustic wave resonators. FBAR simulation with 1D analytical model permits to quickly determine resonator layers thicknesses that correspond to the objective resonant frequency. 3D finite elements method permits to investigate the effect of the electrode shape on the spurious modes that are present in the electrical impedance. In order to reduce or to suppress those modes, solutions have to be investigated.

Keywords

acoustic resonators; bulk acoustic wave devices; electric impedance; electrodes; finite element analysis; thin film devices; 1D analytical model; 3D finite elements method; FBAR simulation; electrical impedance; electrode shape effect; numerical simulations; resonant frequency; spurious modes; thin film bulk acoustic wave resonators; Acoustic waves; Analytical models; Electrodes; Film bulk acoustic resonators; Finite element methods; Impedance; Numerical simulation; Resonant frequency; Shape; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International

Conference_Location

Geneva

ISSN

1075-6787

Print_ISBN

978-1-4244-0646-3

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2007.4319258

Filename

4319258