DocumentCode
3457194
Title
A low-power wide-band 20GHz VCO in 65nm CMOS
Author
Zhu, Guang ; Diao, Shengxi ; Lin, Fujiang ; Guidotti, Daniel
Author_Institution
Dept. of Electron. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
fYear
2012
fDate
27-30 May 2012
Firstpage
291
Lastpage
294
Abstract
A 20GHz (centralized at 18.7GHz) voltage controlled oscillator (VCO) is implemented in standard 65nm CMOS technology. In the design process, several design optimizations including tail current source, cross-couples dimension and inductor selection, are done to achieve a good performance without additional area requirement. Through these techniques, the measured phase noise of -98dBc/Hz@1MHz achieved at 19.97 GHz and the figure of merit (FOM) is -176dBc/Hz. With the help of digital controlled switch array, tuning range is about 15%, from 17.36 to 20.15 GHz without much performance degradation. The total current is 4.6mA under the 1.3V supply voltage, including the buffer current consumption of 0.9mA. To our best knowledge, this is the minimum current consumption for VCO in this frequency band. The area of the core circuit is only 0.35 × 0.25mm2.
Keywords
CMOS integrated circuits; constant current sources; inductors; integrated circuit design; integrated circuit measurement; microwave integrated circuits; microwave oscillators; optimisation; phase noise; switches; voltage-controlled oscillators; FOM; buffer current consumption; cross-couple dimension; current 0.9 mA; current 4.6 mA; digital controlled switch array; figure of merit; frequency 1 MHz; frequency 17.36 GHz to 20.15 GHz; inductor selection; low-power wide-band VCO; optimization design; phase noise measurement; size 65 nm; standard CMOS technology; tail current source; voltage 1.3 V; voltage controlled oscillator; CMOS integrated circuits; CMOS technology; Capacitors; Phase noise; Tuning; Voltage-controlled oscillators; 20 GHz; VCO; low power; wide band;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Waves (GSMM), 2012 5th Global Symposium on
Conference_Location
Harbin
Print_ISBN
978-1-4673-1302-5
Type
conf
DOI
10.1109/GSMM.2012.6314057
Filename
6314057
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