Simulation of the non-idealities in current sharing in parallel IGBT subsystem

The parallel connection of the power semiconductors is used to achieve higher current and higher output power. Small differences in the device characteristics can cause significant differences in the current sharing. Another well known reason for the current imbalance is the asymmetry of the paralleling impedances. These two design aspects are referenced in this paper. A simulation case study is used to illustrate the effect of differences in the power semiconductors and in the paralleling busbars. Simulation results are compared with respective experimental results.