A highly integrated Ka-band MMIC quadrupler

Author

Kamozaki, Keigo ; Bos, Thomas A. ; Camargo, Edmar

Author_Institution

Fujitsu Compound Semicond. Inc., San Jose, CA, USA

Volume

1

fYear

2004

fDate

6-11 June 2004

Firstpage

171

Abstract

A highly integrated monolithic microwave integrated circuit (MMIC) frequency quadrupler was realized in a 0.25 μm pHEMT technology on GaAs. The quadrupler consists of two types of doublers and two buffer amplifiers. An active balun and a planar balun using an asymmetric coupled line were used for each doubler to reduce the chip size and achieve higher gain and output power of 19.4 dBm for an input power of 5 dBm over an output frequency range of 36-40 GHz. The maximum conversion gain of 16.4 dB was measured for an input power of 2 dBm. In saturation, the fundamental is suppressed by 58 dB and the third harmonic by 66 dB.

Keywords

III-V semiconductors; MMIC frequency convertors; analogue multipliers; baluns; field effect MMIC; frequency multipliers; gallium arsenide; integrated circuit design; 0.25 micron; 16.4 dB; 36 to 40 GHz; FET integrated circuits; GaAs; MMIC amplifiers; active balun; analog multipliers; asymmetric coupled line; buffer amplifiers; chip size reduction; converters; frequency doublers; frequency quadrupler; integrated Ka-band MMIC quadrupler; maximum conversion gain; monolithic microwave integrated circuit; pHEMT technology; planar balun; Coupling circuits; Frequency; Gallium arsenide; Impedance matching; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1335835

Filename

1335835