Title :
On-chip high-Q spiral Cu inductors embedded in wafer-level chip-scale package for silicon RF application
Author :
Itoi, Kamhisa ; Sato, Masakam ; Abe, Hiroshi ; Sugawara, Hirotaka ; Ito, Hiroyuki ; Okada, Kenichi ; Masu, Kazuya ; Ito, Tatsuya
Author_Institution :
Electron Device Lab., Fujikura Ltd., Tokyo, Japan
Abstract :
On-chip high-Q spiral inductors on Si substrate with thick resin layer have been fabricated. These inductors were fabricated by a thick Cu electroplated rerouting and separated more than 10 μm from Si substrate by a thick resin layer. The inductance L of 5.2 and 4.9 nH with a quality factor Q of 18.1 and 27.5 were obtained for a 3.5 turn rectangle spiral inductor at 2 GHz in ρ of 4-6, 1k Ωcm, respectively. This technology is favorable for Si RF application to minimize the stray inductance from wire-bonding and reducing circuit resistance.
Keywords :
Q-factor; chip scale packaging; coils; copper; electroplating; elemental semiconductors; passive networks; silicon; thick film inductors; wafer-scale integration; circuit resistance reduction; coils; high-Q spiral inductor; inductor fabrication; on-chip spiral inductor; passive circuits; quality factor; silicon RF application; stray inductance minimization; thick electroplated rerouting; thick resin layer; wafer-level chip-scale package; wafer-scale integration; wire-bonding; Chip scale packaging; Circuits; Inductance; Inductors; Q factor; Radio frequency; Resins; Silicon; Spirals; Wafer scale integration;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1335843
