Title :
Dependence of mechanical on position in silicon ingoto by evaluating B and Ge codoped silicon
Author :
Shirata, T. ; Sato, Takao ; Ando, Takehiro
Author_Institution :
Ritsumeikan Univ., Kusatsu, Japan
Abstract :
This paper reports characterization of mechanical properties of single crystal silicon with heavily-codoped boron (B) and germanium (Ge) as dopant impurities. We prepared three types of B and Ge codoped silicon sliced from the different ingot portion. The silicon device for tensile test was fabricated by using two steps of DRIE without high-temperature process up to 1000 °C. The experimental results revealed that the Young´s modulus and fracture strength was influenced by the portion, i.e. the concentration of the impurities, especially germanium concentration. SEM observation shows fracture initiated from the underside surface etched away by DRIE and formed (111) fracture surface.
Keywords :
Young´s modulus; boron; elemental semiconductors; fracture toughness; germanium; heavily doped semiconductors; impurity distribution; ingots; silicon; sputter etching; tensile testing; (111) fracture surface; DRIE; SEM; Si:B,Ge; Young´s modulus; boron; dopant impurities; fracture strength; germanium; germanium concentration; heavily-codoped silicon; impurity concentration; ingot portion; mechanical properties; silicon ingot; single crystal silicon; tensile test; Crystals; Impurities; Silicon; Surface cracks; Surface treatment; Testing; B and Ge co-doping; Single crystal silicon; impurity concentration; mechanical property; tensile test;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location :
Barcelona
DOI :
10.1109/Transducers.2013.6626952