Title :
Ultra-low-noise, 8.3 GHz dielectric resonator oscillator
Author :
Mizan, Muhammad ; Mcgowan, Raymond
Author_Institution :
US Army Labcom, Ft. Monmouth, NJ, USA
Abstract :
A parallel feedback 8.3-GHz dielectric resonator oscillator (DRO) was designed by evaluating the residual phase noise of the GaAs FET amplifier and the resonant structure (RS). The resonant structure consists of two-port, dielectric resonator coupled to 50-Ω microstrip lines housed inside a copper cavity. The DRO has been shown to have excellent phase noise and temperature stability. The oscillator is small in size (2.54 cm×2.54 cm×2.54 cm) and offers a spurious-free output spectrum. The loaded-Q enhancement of the dielectric resonator and the noise degradation of unpackaged GaAs FET and bipolar junction transistor (BJT) amplifiers at 77 K are reported
Keywords :
dielectric resonators; feedback; microwave oscillators; noise; solid-state microwave circuits; 77 K; 8.3 GHz; BJT amplifiers; Cu cavity; DRO; FET amplifier; GaAs; bipolar junction transistor; dielectric resonator oscillator; loaded-Q enhancement; microstrip lines; parallel feedback; residual phase noise; resonant structure; spurious-free output spectrum; temperature stability; ultra low noise; unpackaged GaAs FET; Copper; Dielectrics; FETs; Feedback; Gallium arsenide; Microstrip resonators; Oscillators; Phase noise; Resonance; Temperature;
Conference_Titel :
Frequency Control, 1991., Proceedings of the 45th Annual Symposium on
Conference_Location :
Los Angeles, CA
Print_ISBN :
0-87942-658-6
DOI :
10.1109/FREQ.1991.145969
