Title :
Resonant acoustooptic interaction mechanisms in materials with broadened absorption line
Author :
Gierus, A.V. ; Chesnokov, V.N. ; Proklov, V.V.
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, Russia
Abstract :
The comparative consideration of efficiencies for all possible mechanisms of acousto-optic interaction in resonant photoelastic structures on base of AlGaInAs is carried out. It is found that the most effective mechanism is the resonant one due to a potential deformation interaction of two-dimensional excitons in multiquantum wells (MQW). Calculation of characteristic photoelastic constants for a general situation with different broadened absorption lines of an exciton resonance is carried out. Some peculiarities of photoelastic resonance under influence of both homogeneous and inhomogeneous line broadening are firstly established and explained
Keywords :
III-V semiconductors; acousto-optical effects; aluminium compounds; excitons; gallium arsenide; gallium compounds; indium compounds; photoelasticity; semiconductor quantum wells; spectral line broadening; AlGaInAs; MQW; broadened absorption line; characteristic photoelastic constants; homogeneous line broadening; inhomogeneous line broadening; multiquantum wells; photoelastic resonance; potential deformation interaction; resonant acoustooptic interaction mechanisms; resonant photoelastic structures; two-dimensional excitons; Acoustic materials; Capacitive sensors; Diffraction gratings; Electromagnetic wave absorption; Excitons; Nonlinear optics; Optical materials; Photoelasticity; Quantum well devices; Resonance;
Conference_Titel :
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
0-7803-3615-1
DOI :
10.1109/ULTSYM.1996.584123
