Development and test of double sided silicon strip detectors

Author

Saito, Kazuyuki ; Nakamura, Mitsutoshi ; Teraoka, K. ; Nakano, T. ; Sato, O. ; Niwa, K. ; Yamamoto, K. ; Yamamura, K.

Author_Institution

Dept. of Phys., Nagoya Univ., Japan

fYear

1991

fDate

2-9 Nov. 1991

Firstpage

289

Abstract

The radiation hardness of double-sided silicon strip detectors (DSSD) has been tested. It was found that addressing charge-up effects of silicon dioxide is a key point in making radiation-hardened DSSD. In order to study this effect, a dedicated test using MOS gate isolated DSSD was made. Implantation of a thicker (denser) acceptor dopant layer in the P region and utilizing the resistance of poly-silicon as a bias voltage supply have been proposed to prevent this effect. Utilizing this method, the authors have produced radiation-hardened devices, made a test exposure, and found that the prevention measures work very well.<>

Keywords

position sensitive particle detectors; radiation hardening (electronics); semiconductor counters; MOS gate isolated; Si double sided strip detectors; SiO/sub 2/; acceptor dopant layer; bias voltage supply; charge-up effects; polySi; radiation hardness; radiation-hardened devices; Decision support systems; Performance evaluation; Radiation detectors; Radiation effects; Radiation hardening; Silicon compounds; Silicon radiation detectors; Strips; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE

Conference_Location

Santa Fe, NM, USA

Print_ISBN

0-7803-0513-2

Type

conf

DOI

10.1109/NSSMIC.1991.258974

Filename

258974