A 4.5 GHz 3-4 dual-modulus frequency divider IC in GaAs technology

Author

Detratti, M. ; Cabo, J. ; Pascual, J.P. ; Herrera, A.

Author_Institution

DICOM, Cantabria Univ., Santander, Spain

Volume

2

fYear

2005

fDate

4-6 Oct. 2005

Abstract

This paper presents a divide-by-3/divide-by-4 dual-modulus frequency divider fabricated in a commercially available GaAs pHEMT technology. The highspeed architecture presented overcomes the inherent frequency limitations of the classical Johnson structure and allows the same speed of the simple divider-by-4 circuit from which it derives. Even if the circuit was designed specifically for its use in frequency generation modules of satellite transponder, it can be conveniently used as the first stage of high frequency dual-modulus prescalers. The fabricated circuit operates up to 4.5GHz with a total power consumption of 75mA from a 3.5V supply.

Keywords

HEMT integrated circuits; III-V semiconductors; frequency dividers; gallium arsenide; low-power electronics; 3.5 V; 4.5 GHz; 75 mA; GaAs; circuit design; dual-modulus frequency divider IC; dual-modulus prescalers; frequency generation module; pHEMT technology; power consumption; satellite transponder; Bandwidth; Clocks; Counting circuits; Flip-flops; Frequency conversion; Frequency synthesizers; Gallium arsenide; Logic gates; Satellites; Transponders;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610095

Filename

1610095