DocumentCode
3458156
Title
Variable property crystal resonators by direct bonding techniques
Author
Kawasaki, O. ; Sugimoto, M. ; Takeda, K. ; Tomita, Y. ; Eda, K.
Author_Institution
Device Eng. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume
2
fYear
1996
fDate
3-6 Nov 1996
Firstpage
897
Abstract
Novel single-crystal bulk acoustic wave (BAW) resonators have been developed. These resonators realize desired electrical properties by directly bonding piezoelectric single crystals such as LiNbO3 and LiTaO3. The direct bonding technique fabricates composite piezoelectric substrates with new electrical properties depend on the combination of bonded wafers. For the first trial, polarization-inverted substrates have been fabricated by directly bonding two wafers of Z-cut LiNbO3 single crystals having opposite polarization-direction. Second overtone resonators using these substrates provide excellent performance. Typically, the resonator has a high Q-value over 5,000, a figure of merit of 138, a capacitance ratio of 40, a resonant resistance of 30 Ω and a frequency deviation of -50 ppm/°C
Keywords
acoustic resonators; bulk acoustic wave devices; crystal resonators; lithium compounds; wafer bonding; LiNbO3; Q-value; Z-cut LiNbO3 wafer; capacitance ratio; composite piezoelectric; crystal resonator; direct bonding; electrical properties; fabrication; figure of merit; frequency deviation; polarization-inverted substrate; resonant resistance; second overtone; single-crystal bulk acoustic wave resonator; Ceramics; Crystalline materials; Crystals; Fabrication; Ferroelectric materials; Piezoelectric polarization; Resonance; Resonant frequency; Vibrations; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location
San Antonio, TX
ISSN
1051-0117
Print_ISBN
0-7803-3615-1
Type
conf
DOI
10.1109/ULTSYM.1996.584137
Filename
584137
Link To Document