DocumentCode :
3458156
Title :
Variable property crystal resonators by direct bonding techniques
Author :
Kawasaki, O. ; Sugimoto, M. ; Takeda, K. ; Tomita, Y. ; Eda, K.
Author_Institution :
Device Eng. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume :
2
fYear :
1996
fDate :
3-6 Nov 1996
Firstpage :
897
Abstract :
Novel single-crystal bulk acoustic wave (BAW) resonators have been developed. These resonators realize desired electrical properties by directly bonding piezoelectric single crystals such as LiNbO3 and LiTaO3. The direct bonding technique fabricates composite piezoelectric substrates with new electrical properties depend on the combination of bonded wafers. For the first trial, polarization-inverted substrates have been fabricated by directly bonding two wafers of Z-cut LiNbO3 single crystals having opposite polarization-direction. Second overtone resonators using these substrates provide excellent performance. Typically, the resonator has a high Q-value over 5,000, a figure of merit of 138, a capacitance ratio of 40, a resonant resistance of 30 Ω and a frequency deviation of -50 ppm/°C
Keywords :
acoustic resonators; bulk acoustic wave devices; crystal resonators; lithium compounds; wafer bonding; LiNbO3; Q-value; Z-cut LiNbO3 wafer; capacitance ratio; composite piezoelectric; crystal resonator; direct bonding; electrical properties; fabrication; figure of merit; frequency deviation; polarization-inverted substrate; resonant resistance; second overtone; single-crystal bulk acoustic wave resonator; Ceramics; Crystalline materials; Crystals; Fabrication; Ferroelectric materials; Piezoelectric polarization; Resonance; Resonant frequency; Vibrations; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location :
San Antonio, TX
ISSN :
1051-0117
Print_ISBN :
0-7803-3615-1
Type :
conf
DOI :
10.1109/ULTSYM.1996.584137
Filename :
584137
Link To Document :
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