Title :
Modeling with resonant tunneling structure simulator RTS-NANODEV
Author :
Abramov, L.I. ; Goncharenko, I.A. ; Danilyuk, A.L. ; Korolev, A.V.
Author_Institution :
Byelorussian State Univ. of Inf. & Radioelectron., Minsk, Byelorussia
Abstract :
A simulator for resonant tunneling devices RTS-NANODEV is described. It consists of three units. The first unit is intended for calculation of the device transmission coefficient and current-voltage characteristic on the basis of various models. The simulation with the second unit is based on electrical models. The analysis of physical phenomena, which takes place in structures, is realized with the use of original models of new transport mechanisms, included in the third unit. Some simulation results are presented for demonstration of the simulator possibilities.
Keywords :
digital simulation; resonant tunnelling devices; semiconductor device models; RTS-NANODEV simulator; current-voltage characteristic; device transmission coefficient; electrical models; resonant tunneling structure; transport mechanisms; Helium; IEEE catalog; Organizing; Resonant tunneling devices;
Conference_Titel :
Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-572-003-1
DOI :
10.1109/CRMICO.1999.815243
